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IRFZ44N,127 Datasheet
Datasheet specifications
| Datasheet's name | IRFZ44N |
|---|---|
| File size | 53.741 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet IRFZ44N |
Download Datasheet |
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Other documentations
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Technical specifications
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: IRFZ4
- detail: N-Channel 55V 49A (Tc) 110W (Tc) Through Hole TO-220AB